进口氧化晶圆是you质进口氧化硅片，已经完成了氧化工艺,方便用户使用,我们可提供6'',4''等各种规格的氧化晶圆。
进口氧化晶圆规格
Grow
Method |
Orientation |
Diameter |
Dopant |
Min.
Resistivity |
Max.
Resistivity |
Flat
Spec |
Thickness
(microns) |
Wafer
Quantity |
| Cz |
<100> |
50.8mm |
Undoped |
>20 |
|
1 |
500±25 |
25 |
| Angstroms = 250±10%, DRY |
| Cz |
<100> |
50.8mm |
Undoped |
>20 |
|
1 |
500±25 |
4 |
| Angstroms = 250±10%, DRY |
| Cz |
<100> |
100.0mm |
N Type |
>20 |
|
1 |
525±25 |
25 |
| Angstroms = 1000 ± 10%, DRY |
| Fz |
<100> |
76.2mm |
Undoped |
>10,000 |
|
1 |
500±25 |
25 |
| Angstroms = 3000 ± 10%, WET |
Grow
Method |
Orientation |
Diameter |
Dopant |
Min.
Resistivity |
Max.
Resistivity |
Flat
Spec |
Thickness
(microns) |
Wafer
Quantity |
| Fz |
<100> |
76.2mm |
Undoped |
>10,000 |
|
1 |
500±25 |
2 |
| Angstroms = 3000 ± 10%, WET |
| Cz |
<100> |
50.8mm |
Undoped |
>20 |
|
1 |
500±25 |
17 |
| Angstroms = 40,000Å |
| Cz |
<100> |
76.2mm |
Boron |
15 |
100 |
2 |
381±25 |
25 |
| Angstroms = 3000 ± 10%, DRY |
| Cz |
<100> |
76.2mm |
Boron |
15 |
100 |
2 |
381±25 |
25 |
| Angstroms = 3000 ± 10%, DRY |
| Cz |
<100> |
100.0mm |
Boron |
>1 |
|
2 |
600±25 |
10 |
| Angstroms = 5000ű10% |
Grow
Method |
Orientation |
Diameter |
Dopant |
Min.
Resistivity |
Max.
Resistivity |
Flat
Spec |
Thickness
(microns) |
Wafer
Quantity |
| Cz |
<100> |
50.8mm |
Undoped |
>20 |
|
1 |
500±25 |
16 |
| Nitride Thickness = 100nm±10%,DRY |
| Cz |
<100> |
100.0mm |
Arsenic |
0.001 |
0.005 |
2 |
500±25 |
8 |
| Angstroms = 250nm±10%, DRY |
| Cz |
<100> |
100.0mm |
Boron |
1 |
10 |
2 |
525±25 |
4 |
| Angstroms = 600±10%, DRY |
| Cz |
<100> |
100.0mm |
Boron |
1 |
10 |
2 |
500±25 |
10 |
| Angstroms = 150nm±10%, , backside ONLY |
| Cz |
<100> |
76.2mm |
Boron |
6 |
9 |
1 |
381±25 |
5 |
| Angstroms = 500ű10% |
Grow
Method |
Orientation |
Diameter |
Dopant |
Min.
Resistivity |
Max.
Resistivity |
Flat
Spec |
Thickness
(microns) |
Wafer
Quantity |
| Cz |
<100> |
100.0mm |
Boron |
0.0006 |
0.0007 |
2 |
425±25 |
3 |
| Angstroms = 5,000±10% |
| Cz |
<111> |
76.2mm |
Boron |
0.00055 |
0.01 |
1 |
127±13 |
13 |
| Angstroms = 12,000±10% |
| Cz |
<100> |
50.8mm |
Phosphorous |
>1 |
|
1 |
381±25 |
20 |
| Angstroms = 1,500±10% |
| Cz |
<100> |
25.4mm |
Undoped |
>20 |
|
1 |
499±25 |
50 |
| Angstroms = wet 2,000±10% |
| Cz |
<100> |
76.2mm |
Boron |
>1 |
|
1 |
375±25 |
7 |
| Angstroms = wet 3,000±10% |
Grow
Method |
Orientation |
Diameter |
Dopant |
Min.
Resistivity |
Max.
Resistivity |
Flat
Spec |
Thickness
(microns) |
Wafer
Quantity |
| Cz |
<100> |
100.0mm |
Boron |
1 |
10 |
2 |
500±25 |
13 |
| Angstroms = wet 1,000±10%, backside ONLY |
| Fz |
<100> |
100.0mm |
Undoped |
>5000 |
|
2 |
550±25 |
14 |
| Angstroms = 10,000±10% |
| Cz |
<100> |
25.4mm |
Undoped |
>20 |
|
1 |
499±25 |
30 |
| Angstroms = 2,000±10% |
| Cz |
<100> |
100.0mm |
Boron |
1 |
10 |
1 |
350±25 |
4 |
| Angstroms = 1000±10% |
| Cz |
<100> |
25.4mm |
Undoped |
>20 |
|
1 |
500±25 |
39 |
| Angstroms = wet 250±10% |
Grow
Method |
Orientation |
Diameter |
Dopant |
Min.
Resistivity |
Max.
Resistivity |
Flat
Spec |
Thickness
(microns) |
Wafer
Quantity |
| Cz |
<100> |
25.4mm |
Phosphorous |
>0.01 |
|
1 |
500±25 |
6 |
| Angstroms = 500±10% |
| Cz |
<100> |
25.4mm |
Phosphorous |
>0.01 |
|
1 |
500±25 |
14 |
| Angstroms = 500±10% |
| Cz |
<110> |
50.8mm |
Phosphorous |
>1 |
|
1 |
200±25 |
9 |
| Angstroms = 12000±10% |
| |
|
